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Producer information
Company:
RAYMOND MANAGEMENT CONSULTANT CO; LTD.
 
Address:
208.ta-shin rd. lu chu hsiang. tao yuan hsien. taiwan
 
Phone:
+886-3-3137017

gate oxide technology


1.Introduction,,2.Ultra-thin Oixde Preparation ,,3.Intrinsic Properties of Thermal Oxide and Characterization , ,4.Oxide Reliability, ,5.Limits of Oxide Scaling, ,6.High-k Dielectric Technology

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gate oxide technology
gate oxide technology (gate oxide technology)
1.Introduction,,2.Ultra-thin Oixde Preparation ,,3.Intrinsic Properties of Thermal Oxide and Characterization , ,4.Oxide Reliability, ,5.Limits of Oxide Scaling, ,6.High-k Dielectric Technology
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lithography technology (lithography technology)
1.Introduction,,2.Lithographic Systems and Illumination ,,3.Resist Technology,,4.Modeling & Simulations,,5.Resolution Enhancement Technology,,6.Critical Issues and Solutions ,,7.Imaging the Future
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lithography technology (lithography technology)
1.Introduction,,2.Lithographic Systems and Illumination ,,3.Resist Technology,,4.Modeling & Simulations,,5.Resolution Enhancement Technology,,6.Critical Issues and Solutions ,,7.Imaging the Future
lithography technology
lithography technology (lithography technology)
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low-k technology (low-k technology)
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low-k technology
low-k technology (low-k technology)
1. Motive of low-k materials,,2. Kinds of low-k materials,,3. Mechanism of low-k materials,,4. Study on porous SiO2 (Sol-gel),,5. Integration between low-k and Cu,,6. Conclusion
low-k technology
low-k technology (low-k technology)
1. Motive of low-k materials,,2. Kinds of low-k materials,,3. Mechanism of low-k materials,,4. Study on porous SiO2 (Sol-gel),,5. Integration between low-k and Cu,,6. Conclusion

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